| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1825839 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2010 | 4 Pages |
Abstract
We have fabricated a radiation detector using a p-type InSb crystal grown by liquid phase epitaxy (LPE). At temperatures below 100 K, the resistivity of the LPE crystal was over an order of magnitude higher than that of the commercial InSb crystal substrate. The resistance of the InSb detector is 680 kΩ at 4.2 K, which is one order of magnitude higher than that of detectors fabricated from commercial InSb wafers and, in an improvement over previous results, the energy resolution of 241Am alpha particles reaches 3%. In addition, we also observe the photopeak of gamma-rays emitted by 133Ba.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Yuki Sato, Yasunari Morita, Tomoyuki Harai, Ikuo Kanno,