| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1826332 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2010 | 12 Pages |
Abstract
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660 nm laser light to create different densities of electron hole pairs.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Julian Becker, Klaus Gärtner, Robert Klanner, Rainer Richter,