| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1826503 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 8 Pages |
Abstract
In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10 μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Y. Bilevych, V.M. Blanco Carballo, M. Chefdeville, P. Colas, E. Delagnes, M. Fransen, H. van der Graaf, W.J.C. Koppert, J. Melai, C. Salm, J. Schmitz, J. Timmermans, N. Wyrsch,