Spectroscopic model for SiC X-ray detectors

A Monte Carlo model has been developed to predict the X-ray spectroscopic performance of silicon carbide detectors over the energy range 1–60 keV. Consideration of the charge creation and diffusion in the different active layers along with provision for fluorescence and Compton scattering produce spectra that are in good agreement with measurements. Direct comparison of modelled spectra with X-ray data from a novel detector, the Semi-Transparent SiC Schottky Diode (STSSD) and comparison of SiC data from the literature also shows good agreement between the reported spectra and the model. Predicted quantum efficiencies are also presented.