Article ID Journal Published Year Pages File Type
1827106 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2010 6 Pages PDF
Abstract

A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8×1015n/cm2 and protons up to 1.7×1015p/cm2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1×1012neq/cm2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Instrumentation
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