| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1827329 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2010 | 7 Pages |
C36H28N12O8ZnCl2·9/2H2O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using 1H NMR, 13C NMR, IR, UV–vis and LC–MS spectroscopic methods. The Sn/ZnOA/n-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under 60Co γ-source at room temperature. Characteristic parameters of the diode were determined from its current–voltage (I–V) and capacitance voltage (C–V) measurements before and after irradiation. It was observed that γ-irradiation had clear effects on I–V and C–V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased.
