| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1827865 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2009 | 4 Pages |
Abstract
Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6×10146×1014 1 MeV neq/cm2neq/cm2 fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N ratio of 20 for the sensors irradiated to the fluences of 1×10141×1014 1 and 5×10145×1014 1 MeV neq/cm2neq/cm2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
P. Luukka, J. Härkönen, T. Mäenpää, B. Betchart, S. Czellar, R. Demina, A. Furgeri, Y. Gotra, M. Frey, F. Hartmann, S. Korjenevski, M.J. Kortelainen, T. Lampén, B. Ledermann, V. Lemaitre, T. Liamsuwan, O. Militaru, H. Moilanen, H.J. Simonis, L. Spiegel,