| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1828437 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2008 | 4 Pages |
Abstract
A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also bonded to a Medipix2 chip. The measured photopeak responses are used to calibrate both detectors. The depth of depletion of the GaAs sensor is estimated to be â¼50 μm at 140 V sensor bias voltage from measurements made using the 8 keV Kα line of a Cu target X-ray tube.
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Physical Sciences and Engineering
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Authors
Lukas Tlustos, M. Campbell, C. Fröjdh, Pasi Kostamo, Seppo Nenonen,