| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1828452 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2008 | 4 Pages |
Abstract
In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs. We fabricated SI GaAs radiation detectors with Ti/Pt/Au Schottky contact on one side and In/Au, Mg/Au and Gd/Au contacts on the other side of bulk material with the aim to form hole barrier Schottky contact with non-injecting effect. Current–voltage and noise characteristics and also detection performance of detectors are measured and evaluated. Observed results are discussed and compared with detector using standard AuGeNi non-alloyed ohmic metallization.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Pavol Boháček, Bohumír Zat’ko, František Dubecký, Štefan Chromík, Jozef Huran, Mária Sekáčová,