| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1828474 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2008 | 4 Pages |
Abstract
Results from synchrotron X-ray topography and electrical characterization of thick epitaxial GaAs p–i–n structures suitable for manufacturing of radiation detectors are reported. The structures under study have been grown with hydride vapor phase epitaxy method. A comprehensive set of large-area transmission, large-area back-reflection and transmission section topographs are analyzed. The X-ray topography results are compared with the dark current density of the detector diodes. The X-ray topographs show the defect structure in the samples and provide important information for epitaxial process optimization.
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Authors
Pasi Kostamo, Aapo Lankinen, Turkka O. Tuomi, Antti Säynätjoki, Harri Lipsanen, Yuri Zhilyaev, Leonid Fedorov, Tatiana Orlova,