The effect of doping on X-ray response of TlBr crystals

The response of TlBr crystals (both undoped and doped with either In1+ or Pb2+) to X-ray radiation was studied. It was experimentally observed that the response of TlBr, TlBr:Pb2+ and TlBr:In1+ crystals to X-ray irradiation strongly depends on the polarity of irradiated contact. A simple model based on X-ray and charge carriers’ interaction qualitatively explained the effect. The Tl1+ ions’ X-ray-induced mobility of 6.6×10−14 cm2/V s and diffusion coefficient of 1.7×10−15 cm2/s at room temperature were estimated from X-ray-induced current–time measurements of TlBr and TlBr:Pb2+ crystals using suggested model.