Radiation damage in p-type silicon irradiated with neutrons and protons

Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials were irradiated with reactor neutrons and 24 GeV/c protons up to an equivalent fluence of Φeq=3×1014 cm−2. Radiation effects on effective trapping times, effective dopant concentration and leakage current were measured at 20 °C. Annealing of defects was performed at 20 and 60 °C.