Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1829422 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2008 | 4 Pages |
Abstract
An enhanced low dose rate effect (ELDRE) was observed in the radiation-sensitive field effect transistors (RADFETs) developed by the National Microelectronics Research Centre (NMRC) for a low total accumulated dose of less than ∼45 Gy in silicon, or 45 Gy(Si). The effect was seen to persist even after∼8 days of annealing at room temperature, implying that it was not a transient effect but rather a permanent one. On the other hand, the ELDRE was seen to disappear at high total doses of above ∼90 Gy(Si).
Related Topics
Physical Sciences and Engineering
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Instrumentation
Authors
D.H. Ko, S.J. Kim, K.W. Min, J. Park, K.S. Ryu,