| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1829933 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
Results on the radiation hardness of multipixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from three manufacturers (Hamamatsu (Japan), CPTA(Russia) and Mikron/Dubna(Russia)) were exposed to 28Â MeV positrons with fluences up to 8Ã1010positrons/cm2 at the Paul Scherrer Institute. The effects of this radiation on many G-APD parameters such as gain, photon detection efficiency, dark current and count rate for these devices are shown and discussed.
Related Topics
Physical Sciences and Engineering
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Instrumentation
Authors
Y. Musienko, D. Renker, S. Reucroft, R. Scheuermann, A. Stoykov, J. Swain,