Monolithic integration of detectors and transistors on high-resistivity silicon

Article ID	Journal	Published Year	Pages	File Type
1830038	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment	2007	6 Pages	PDF

Abstract

We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.

Keywords

85.30.Tv 29.40.Wk 85.30.Pq 29.30.Kv 29.40.Gx 84.30.Le 84.37.+q Silicon radiation detectors Bipolar junction transistors Field effect transistors Electrical characterization

Related Topics

Physical Sciences and Engineering Physics and Astronomy Instrumentation

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Monolithic integration of detectors and transistors on high-resistivity silicon

Authors

Gian-Franco Dalla Betta, Giovanni Batignani, Maurizio Boscardin, Luciano Bosisio, Paolo Gregori, Lucio Pancheri, Claudio Piemonte, Lodovico Ratti, Giovanni Verzellesi, Nicola Zorzi,