Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1830044 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
Technologies are being developed which enable the vertical integration of sensors and electronics as well as multilayer electronic circuits. New thinning and wafer bonding techniques and the formation of small vias between resulting thin layers of electronics enable the design of dense integrated sensor/readout structures. We discuss candidate technologies based on SOI and bulk CMOS. A prototype 3D chip developed at Fermilab that incorporates three tiers of 0.18μm CMOS is described.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
R. Lipton,