Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1830108 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
A 300μm thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent (>99.9%)(>99.9%). Comparative measurements with respect to a standard planar 300μm Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.
Keywords
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Physical Sciences and Engineering
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Instrumentation
Authors
Lukas Tlustos, Juha Kalliopuska, Rafael Ballabriga, Michael Campbell, Simo Eränen, Xavier Llopart,