| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1830401 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 10 Pages |
New 3D Si detector structures have been proposed by BNL at the end of 2005. Different from the traditional planar Si detector technology, 3D detector technology places p+ and n+ electrodes vertically through the entire detector thickness, thus involves 3D processing. Our new 3D structures have some new features either in configuration and/or in processing: (1) all electrodes are processed on one side of the wafer to ensure a simple, true one-sided processing; and (2) stripixel electrode configuration can be arranged to get 2D position sensitive strip-like detectors with single-sided processing. The processing of the first prototype detectors batch of the new 3D detectors with single-column (n+ column on p-type substrate) has begun. All n+ columns have been etched and the remaining planar processing are been finishing up. Dual electrode columns (p+ and n+) one-sided 3D Si detectors are planned for future prototype batches. Electric field simulations and estimation of CCE at SLHC fluences have been carried out for the new 3D Si detectors.
