Electro-optical measurements of 3D-stc detectors fabricated at ITC-irst

In the past two years 3D silicon radiation detectors have been developed at ITC-irst (Trento, Italy). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electro-optical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.