| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1830414 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
Fluence-dependent carrier lifetime variation in heavily proton-irradiated Si detectors has been investigated by the microwave probed photoconductivity (MW-PCD) and transient grating (TG) techniques. Nearly linear decrease of carrier recombination lifetime, from hundreds of ns to few ns, as a function of fluence has been found in Si detectors fabricated on FZ standard and oxygenated material, after irradiation by 24Â GeV/c protons with fluence in the range from 1014 to 1015Â cmâ2. Radiation-defect dependent features of carrier transport and recombination have been analyzed. Models of carrier recombination centers associated with the radiation defects are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
E. Gaubas, A. Kadys, J. Vaitkus, E. Fretwurst,