Silicon Drift Detectors development for position sensing

Novel Silicon Drift Detectors (SDDs) with multi-linear architecture specifically intended for 2D position sensing and imaging applications are presented and their achievable spatial, energy and time resolution are discussed. The capability of providing a fast timing of the interaction with nanosecond time resolution is a new available feature that allows operating the drift detector in continuous readout mode for coincidence imaging applications either with an external trigger or in self-timing. The application of SDDs with multi-linear architecture to Compton electrons’ tracking within a single silicon layer and the achieved experimental results will be discussed.