| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1831384 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki,