| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1831688 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 6 Pages |
Abstract
The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17×17μm2 and was designed in a 0.6μm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
G. Deptuch, A. Besson, G.A. Carini, D.P. Siddons, M. Szelezniak, M. Winter,