Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1831778 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 9 Pages |
Abstract
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5Ã1014 to 5.9Ã1014neq/cm2. The model correctly predicts the variation in the profiles as the temperature is changed from -10 to -25âC. The measured charge collection profiles are inconsistent with the linearly varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
M. Swartz, V. Chiochia, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hörmann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D.A. Sanders, S. Son, T. Speer,