Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1832214 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 4 Pages |
Abstract
Annealing of effective trapping times of electrons and holes in neutron irradiated silicon detectors was measured at different temperatures 40, 60, 80°C. The evolution of effective trapping times seems to be governed by the first-order process. The effective trapping probability of holes was found to increase by 40% and of electrons to decrease by 20% during annealing. The time constants are of order 600 min at 60°C. The scaling to different temperatures can be obtained from Arrhenius relation with activation energies of around 1 eV.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
G. Kramberger, M. Batič, V. Cindro, I. Mandić, M. Mikuž, M. Zavrtanik,