Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1832429 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 4 Pages |
Abstract
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Φ=5.9×1014neq/cm2 a position resolution below 15μm can be achieved after calibration.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
V. Chiochia, E. Alagöz, M. Swartz,