| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1832454 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 5 Pages |
Abstract
Radiation hardness of silicon detectors based on thin epitaxial layer on Czochralski (CZ) substrate for the LHC upgrade (Super-LHC) was studied. No type inversion was observed after irradiation by 24Â GeV/c protons up to the fluence of 1016Â p/cm2 due to overcompensating donor generation. After long-term annealing (corresponding to 500 days at room temperature) proton irradiated devices show a decrease of the effective doping concentration and then undergo type inversion. Measurements confirm that thin epitaxial devices on CZ substrate could be used for innermost layers of vertex detectors in future experiments at the Super-LHC.
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Authors
V. Khomenkov, D. Bisello, M. Bruzzi, A. Candelori, A. Litovchenko, C. Piemonte, R. Rando, F. Ravotti, N. Zorzi,