| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1832494 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 8 Pages |
Abstract
We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Claudio Piemonte, Gian-Franco Dalla Betta, Maurizio Boscardin, Paolo Gregori, Nicola Zorzi, Lodovico Ratti,