Article ID Journal Published Year Pages File Type
1832922 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2006 4 Pages PDF
Abstract
We first show that GaAs is adapted to X-ray imaging because it corresponds to a value of the atomic number which realizes the best balance between contrast, spatial resolution and absorption efficiency. Moreover, the material adapted to imaging should have a low and uniform defect concentration, which implies the use of thick epitaxial GaAs layers. Finally, because pixel detectors, processed on one surface, are bump bonded on an ASIC, the X-ray irradiation must be applied on the opposite surface. This additional condition implies that imagers should be made of self-supported epitaxial layers to prevent the attenuation of the X-ray flux in the substrate. We describe the way to obtain such type of layers and the characteristics of detectors made with them.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Instrumentation
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