| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1832926 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 4 Pages |
GaN and its ternary alloy AlGaN have been investigated as UV detector materials for applications in protein structure studies. Interdigitated metal–semiconductor–metal (MSM) finger photodiodes, with finger spacings/widths of 5 and 10μm, were successfully fabricated on six different GaN/AlGaN materials. Current–Voltage (I–V ) characteristics and spectral response measurements were made on completed devices. The results showed negligible difference in performance between the 5μm finger spacing/width diode design and the 10μm finger spacing/width diode design. Using these results, a 46 channel diode array, with a finger spacing/width of 10μm, was successfully fabricated on 2.5μm thick epitaxial GaN. This 46 channel diode array will be used in a protein structure experiment at the Daresbury SRS.
