| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1833382 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 5 Pages |
Abstract
Simulation was used to study the dependence of geometry on induced charge in heavily irradiated position-sensitive silicon detectors. Impact of pixel/strip pitch, implant width, thickness and electric field profile on collected charge was discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
G. Kramberger, D. Contarato,