Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1833390 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 4 Pages |
Abstract
We report measurements in a high-energy pion beam of the sensitivity of the edge region in “edgeless” planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8stat..±6syst.) μm.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
B. Perea Solano, M.C. Abreu, V. Avati, T. Boccali, V. Boccone, M. Bozzo, R. Capra, L. Casagrande, W. Chen, K. Eggert, E. Heijne, S. Klauke, Z. Li, T. Mäki, L. Mirabito, A. Morelli, T.O. Niinikoski, F. Oljemark, V.G. Palmieri, P. Rato Mendes,