| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1859673 | Physics Letters A | 2015 | 5 Pages |
•The electronic transport properties of zigzag BeS nanoribbons (ZBeSNRs) are investigated.•The ZBeSNRs show the remarkable negative differential resistance (NDR) properties.•The electronic transport properties of ZBeSNRs are independent of the nanoribbon width.•The NDR behavior can be maintained by introducing a Be or S atom vacancy defect.•The H-passivated ZBeSNR presents the interesting current-limited effect.
The electronic transport properties of zigzag beryllium sulfide nanoribbons (ZBeSNRs) are investigated by first-principles calculations. The results indicate that the electrons flow mainly through the two edges of ZBeSNRs. The electron transmission pathways are analyzed in detail. The ZBeSNRs show the remarkable negative differential resistance (NDR) properties, which are independent of the nanoribbon width due to their very similar band structures. The NDR behavior can be maintained by introducing a Be or S atom vacancy defect. The H-passivated ZBeSNR presents the interesting current-limited effect. The ZBeSNRs could be the promising candidates for the future nano devices, such as NDR devices.
