Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1859688 | Physics Letters A | 2010 | 7 Pages |
Abstract
Considering various In distributions, we investigate electronic structures and light emission of wurtzite InxGa1 − xN (0⩽x⩽10⩽x⩽1) alloys. We find InxGa1 − xN forms a random alloy, in which many several-atom In-N clusters and short In-N- chains can exist. Small In-N clusters, especially in-plane ones, strongly localize valence electrons and dominate light emission in Ga-rich InxGa1 − xN alloys, which is consistent with experiments.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Shuai Zhang, Jun-jie Shi, Shang-guo Zhu, Fei Wang, Mao Yang, Zhi-qiang Bao,