| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1859690 | Physics Letters A | 2010 | 5 Pages |
Abstract
We investigate the dielectric properties in strained SrTiO3 thin films by employing the transverse-field Ising model, combining with the thermodynamic analysis to modify the strain dependent parameters. Ferroelectricity in STO thin films appears when the strain rises above a critical value, due to the decreasing influence of quantum fluctuations.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
H. Wu, R. Zhang, Y.G. Zhan,