| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1859864 | Physics Letters A | 2014 | 5 Pages |
•Dual-gated silicene forms a lateral spin-resonant tunneling diode.•Resonant spin polarization can be electrically modulated in the concerned spin-RTD.•Dual-gated silicene can be used as beam-dependent spin/valley filter.
Based on the dual-gated silicene, we have evaluated theoretically the spin-dependent transport in lateral resonant tunneling structure. By aligning the completely valley-polarized beam with spin-resolved well state in concerned structure, large spin polarization can be expected owing to spin-dependent resonant tunneling mechanism. Under the gate electric field modulation, the forming quantum well state can be externally manipulated, triggering further the emergence of externally-controllable spin polarization. Importantly, integrating the considered structure with a proper valley-filter, which might be constructed from valley-contrasting physics as that in graphene valleytronics, completely-polarized spin beam can also be attained without the assistance of ferromagnetic component, providing thus some profitable strategies to develop nonmagnetic spintronic devices residing on silicene.
