Article ID Journal Published Year Pages File Type
1859864 Physics Letters A 2014 5 Pages PDF
Abstract

•Dual-gated silicene forms a lateral spin-resonant tunneling diode.•Resonant spin polarization can be electrically modulated in the concerned spin-RTD.•Dual-gated silicene can be used as beam-dependent spin/valley filter.

Based on the dual-gated silicene, we have evaluated theoretically the spin-dependent transport in lateral resonant tunneling structure. By aligning the completely valley-polarized beam with spin-resolved well state in concerned structure, large spin polarization can be expected owing to spin-dependent resonant tunneling mechanism. Under the gate electric field modulation, the forming quantum well state can be externally manipulated, triggering further the emergence of externally-controllable spin polarization. Importantly, integrating the considered structure with a proper valley-filter, which might be constructed from valley-contrasting physics as that in graphene valleytronics, completely-polarized spin beam can also be attained without the assistance of ferromagnetic component, providing thus some profitable strategies to develop nonmagnetic spintronic devices residing on silicene.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
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