Spatial weak infrared-light bright and dark solitons in semiconductor quantum-dot nanostructures

The formation of spatial weak infrared-light solitons through interband and intersubband transitions in semiconductor quantum dots (QDs) is theoretically investigated with feasible parameters. Our analysis is shown using GaAs–Al–GaAs QD structures that allow operation at communication wavelength. Such a three-level QD solid-state system for the infrared-light-soliton operation is much more practical than that in gaseous media as a result of its flexible design and the wide adjustable parameters and thus facilitate more practical applications in optical signal processing and telecommunication.