Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1861204 | Physics Letters A | 2010 | 5 Pages |
Abstract
Atomic and electronic properties of N–N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N–N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Zhiguo Wang, Jingbo Li,