Article ID Journal Published Year Pages File Type
1861204 Physics Letters A 2010 5 Pages PDF
Abstract

Atomic and electronic properties of N–N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N–N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
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