Ferromagnetism of semiconductor structures with indirect interaction of magnetic impurities via the quasi-two-dimensional conductive channel

In the framework of the mean field theory, the ferromagnetism in the layer of magnetic impurity atoms indirectly interacting via the quasi-two-dimensional conductive channel in the neighboring quantum well is considered. The interaction arises due to the penetration of the charge carriers' wave functions into the region where impurities are placed. Curie temperature, its dependencies on the well depth and the carrier concentration in the well, as well as the spatial distribution and the temperature dependence of the magnetization have been found. Results are correlated with the experimental data related to structures based on diluted magnetic semiconductors of the Ga1−xMnxAs-type.