Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1862769 | Physics Letters A | 2006 | 4 Pages |
Abstract
Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the 〈001〉〈001〉 direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Shao-Min Zhou,