Hydrogenic impurity states in a wurtzite InGaN quantum dot

Within the framework of effective-mass approximation, we calculated variationally the binding energy of a hydrogenic donor impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot (QD), including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. It is found that the donor binding energy is highly dependent on the impurity position and QD size. In particular, we found that the donor binding energy is independent of dot height when the impurity is located at the right boundary of the WZ InGaN strained QD with large dot height (⩾2.5 nm).