| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1864587 | Physics Letters A | 2008 | 4 Pages |
Abstract
The behavior of leakage current at reverse bias in p-La0.9Sr0.1MnO3/n-SrNb0.01Ti0.99O3 heterojunction has been theoretically studied by calculating interband tunneling current with various doping densities and temperatures. Our results reveal that the reduction of leakage current with decrease of doping density and increase of temperature originates from properties of interband tunneling.
Related Topics
Physical Sciences and Engineering
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Authors
Peng Han, Jin-Feng Jia,