Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1864626 | Physics Letters A | 2006 | 5 Pages |
Abstract
Amorphization of crystalline silicon is achieved by irradiation of energetic argon ions generated in the dense plasma focus. Raman spectroscopy and X-ray diffraction of crystalline and irradiated samples show that crystalline silicon transforms into completely disordered structure through polycrystalline and amorphous phases on increasing the implanted dose.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Mehboob Sadiq, M. Shafiq, A. Waheed, R. Ahmad, M. Zakaullah,