Analysis of charge conduction mechanisms in nitrided SiO2 Film on 4H SiC

Seven different thicknesses (2–20 nm) of nitrided SiO2 on n-type 4H-SiC have been employed to investigate the charge conduction mechanism through these oxides. Several potential mechanisms have been identified. The mechanisms are depending on electric field and oxide thickness. A relationship plot among these three parameters has been established.