Effect of interaction between periodic δ-doping in both well and barrier layers on modulation of superlattice band structure

The modulation of superlattice band structure via periodic δ-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the δ-function potentials in the well layers and those in the barrier layers on SL band structure have been revealed. It is pointed out that the energy dispersion relation Eq. (3) given in [G. Ihm, S.K. Noh, J.I. Lee, J.-S. Hwang, T.W. Kim, Phys. Rev. B 44 (1991) 6266] is an incomplete one, as the interaction between periodic δ-doping in both well and barrier layers had been overlooked. Finally, we have shown numerically that the electron states of a GaAs/Ga0.7Al0.3As superlattice can be altered more efficiently by intelligent tuning the two δ-doping's positions and heights.