| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1865259 | Physics Letters A | 2007 | 5 Pages |
Abstract
Vanadium incorporation in SrBi4Ti4O15 results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does not increase after V-doping. The electric property improvement is originated from the restraint of oxygen vacancies, mobility weakening of the defects, and the vacancies produced at A-site.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Jun Zhu, Xiao-Bing Chen, Jun-hui He, Jian-Cang Shen,