Article ID Journal Published Year Pages File Type
1865506 Physics Letters A 2010 4 Pages PDF
Abstract
We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-type potentials.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
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