Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1865506 | Physics Letters A | 2010 | 4 Pages |
Abstract
We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-type potentials.
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Authors
B. Bagchi, A. Ganguly, A. Sinha,