Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTexS1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be 0.13:0.87 for Te:S by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTexS1 − x quantum dots are also determined.