Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots

Using wafer bonding (WB) and wet oxidation (WO) techniques, GaInP microdisks having an asymmetric waveguide (diameters D=1–3 μmD=1–3 μm) with embedded InP quantum dots (size/density ∼100 nm/∼109 cm−2∼109 cm−2) have been fabricated on Si and GaAs substrates, respectively. The TEm,lTEm,l (m=28–12m=28–12, l=1,2l=1,2) and TMm,lTMm,l (m=25–10m=25–10, l=1–4l=1–4) whispering gallery modes with quality factors Q∼2–5×103Q∼2–5×103 have been identified in photoluminescence spectra of these microdisks (MDs) in the spectral range 720–770 nm. Lasing thresholds of 6 (30) μW and mode coupling constants 0.9 (0.7) have been demonstrated for WO (WB) MDs.