| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1866558 | Physics Letters A | 2006 | 5 Pages |
Abstract
Signatures associated with electronic states confined in two strained InxGa1-xAs/GaAs single quantum wells have been observed in its piezomodulated (PzR) and photomodulated (PR) reflectivity spectra. One comparison of the relative intensity between 11H and 11L signatures in PzR of GaAs/In0.14Ga0.86As SQW emphasizes the contribution of strain dependence of energies of the confined states; the other comparison of corresponding confined states between PzR and PR spectra in both samples has been introduced to interpret the discrepancy of the relative intensity in term of modulated strength, and the calculated ratio of energy shifts ÎEs induced by strain to that of ÎEe produced by surface electric field agree with the experimental observation.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
C. Wang, P.P. Chen, N.Y. Tang, C.S. Xia, X.S. Chen, W. Lu,